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Metrology and physical mechanisms in...

Celano, Umberto.

Metrology and physical mechanisms in new generation ionic devices[electronic resource] /

紀錄類型:	書目-電子資源 : Monograph/item
杜威分類號:	621.38152
書名/作者:	Metrology and physical mechanisms in new generation ionic devices/ by Umberto Celano.
作者:	Celano, Umberto.
出版者:	Cham : : Springer International Publishing :, 2016.
面頁冊數:	xxiv, 175 p. : : ill. (some col.), digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Thin films.
標題:	Electronic apparatus and appliances.
標題:	Metrology.
標題:	Nonvolatile random-access memory.
標題:	Physics.
標題:	Spectroscopy and Microscopy.
標題:	Nanotechnology and Microengineering.
標題:	Characterization and Evaluation of Materials.
ISBN:	9783319395319
ISBN:	9783319395302
內容註:	Introduction -- Filamentary-Based Resistive Switching -- Nanoscaled Electrical Characterization -- Conductive Filaments: Formation, Observation and Manipulation -- Three-Dimensional Filament Observation -- Reliability Threats in CBRAM -- Conclusions and Outlook.
摘要、提要註:	The thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative technology and nm-scale observations, the author achieves essential insights into the filament formation mechanisms, improves the understanding required for device optimization, and experimentally observes phenomena that had previously been only theoretically proposed.
電子資源:	http://dx.doi.org/10.1007/978-3-319-39531-9

Metrology and physical mechanisms in new generation ionic devices[electronic resource] /
Celano, Umberto.

Metrology and physical mechanisms in new generation ionic devices[electronic resource] /by Umberto Celano. - Cham :Springer International Publishing :2016. - xxiv, 175 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Filamentary-Based Resistive Switching -- Nanoscaled Electrical Characterization -- Conductive Filaments: Formation, Observation and Manipulation -- Three-Dimensional Filament Observation -- Reliability Threats in CBRAM -- Conclusions and Outlook.

The thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative technology and nm-scale observations, the author achieves essential insights into the filament formation mechanisms, improves the understanding required for device optimization, and experimentally observes phenomena that had previously been only theoretically proposed.

ISBN: 9783319395319

Standard No.: 10.1007/978-3-319-39531-9doiSubjects--Topical Terms:

183807
Thin films.

LC Class. No.: QC176.83

Dewey Class. No.: 621.38152

Metrology and physical mechanisms in new generation ionic devices[electronic resource] /
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505 0 $a Introduction -- Filamentary-Based Resistive Switching -- Nanoscaled Electrical Characterization -- Conductive Filaments: Formation, Observation and Manipulation -- Three-Dimensional Filament Observation -- Reliability Threats in CBRAM -- Conclusions and Outlook.
520 $a The thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative technology and nm-scale observations, the author achieves essential insights into the filament formation mechanisms, improves the understanding required for device optimization, and experimentally observes phenomena that had previously been only theoretically proposed.
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650 0 $a Nonvolatile random-access memory. $3 617869
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650 2 4 $a Nanotechnology and Microengineering. $3 463475
650 2 4 $a Characterization and Evaluation of Materials. $3 463765
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