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Compact MOSFET models for VLSI design /

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Bhattacharyya, A. B.

Compact MOSFET models for VLSI design /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.395
書名/作者:	Compact MOSFET models for VLSI design // A.B. Bhattacharyya.
作者:	Bhattacharyya, A. B.
出版者:	Singapore ; : John Wiley & Sons (Asia) ;, c2009.
面頁冊數:	xxiv, 432 p. : : ill. ;; 26 cm.
標題:	Integrated circuits - Very large scale integration
標題:	Metal oxide semiconductor field-effect transistors - Design and construction.
ISBN:	9780470823422(hbk.)
ISBN:	0470823429
書目註:	Includes bibliographical references and index.
內容註:	Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.

Compact MOSFET models for VLSI design /
Bhattacharyya, A. B.

Compact MOSFET models for VLSI design /A.B. Bhattacharyya. - Singapore ;John Wiley & Sons (Asia) ;c2009. - xxiv, 432 p. :ill. ;26 cm.

Includes bibliographical references and index.

Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.

ISBN: 9780470823422(hbk.)Subjects--Topical Terms:

418525
Integrated circuits
--Very large scale integration

LC Class. No.: TK7874.75 / .B52 2009

Dewey Class. No.: 621.395

Compact MOSFET models for VLSI design /
LDR:01124cam 2200169 a 4500 001 490102
008 210115s2009 si a g 001 0 eng d
020 $a 9780470823422(hbk.)
020 $a 0470823429
040 $a DLC $c DLC $d BTCTA $d BAKER $d YDXCP $d C#P $d BWX $d OKU $d DLC $d FCU $d DYU
041 0 # $a eng
050 0 0 $a TK7874.75 $b .B52 2009
082 0 # $a 621.395
100 1 $a Bhattacharyya, A. B. $q (Amalendu Bhushan) $3 708687
245 1 0 $a Compact MOSFET models for VLSI design / $c A.B. Bhattacharyya.
260 # $a Singapore ; $a Hoboken, NJ : $b John Wiley & Sons (Asia) ; $a [Piscataway, NJ] : $b IEEE Press, $c c2009.
300 $a xxiv, 432 p. : $b ill. ; $c 26 cm.
504 $a Includes bibliographical references and index.
505 0 # $a Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
650 # 0 $a Integrated circuits $x Very large scale integration $x Design and construction. $3 418525
650 # 0 $a Metal oxide semiconductor field-effect transistors $x Design and construction. $3 708688

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