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Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001).

紀錄類型:	書目-電子資源 : Monograph/item
書名/作者:	Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001).
作者:	Fankhauser, Joshua Paul.
出版者:	Ann Arbor : : ProQuest Dissertations & Theses, , 2016
面頁冊數:	41 p.
附註:	Source: Masters Abstracts International, Volume: 55-04.
Contained By:	Masters Abstracts International55-04(E).
標題:	Materials science.
ISBN:	9781339830506
摘要、提要註:	I report the growth of epitaxial Zr(0 0 0 1) and ZrC(1 1 1) thin films on Al2O3(0 0 0 1) via dc magnetron sputtering in an ultra-high vacuum deposition system equipped with facilities for chemical vapor deposition, low-energy electron diffraction, and Auger electron spectroscopy. Zr layers with a nominal thickness up to 270 nm are deposited at a rate of ∼0.07 nm/s in 10 mTorr Ar (99.999%) atmosphere. ZrC layers with a nominal thickness up to 110 nm are deposited at a rate of ∼0.06 nm/s in 10 mTorr atmosphere composed of 1 mTorr C2H4 (99.999%) and 9 mTorr Ar. As part of my thesis work, I investigate the effect of substrate temperature during sputter-deposition on the composition and crystallinity of the Zr and ZrC films. The as-deposited films are characterized in situ using Auger electron spectroscopy and low energy electron diffraction and ex situ using x-ray diffraction, transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. I deposited Zr thin films at temperatures between 600°C and 900°C. My x-ray diffraction studies reveal that increasing the substrate temperature during sputter-deposition of Zr leads to the growth of polycrystalline hexagonal close-packed structure Zr films. Cross-sectional transmission electron microscopy images reveal columnar growth and the formation of an interfacial layer, whose thickness increased with increasing temperature. Energy dispersive x-ray spectra obtained from this region reveal the presence of both Zr and Al. I attribute the formation of this interfacial layer to plasma-induced substrate decomposition followed by interdiffusion of Al and Zr at the film-substrate interface during sputtering. I deposited ZrC layers at temperatures between 800°C and 1400°C. X-ray diffraction data acquired from my samples indicate that the crystallinity improves with increasing temperature. X-ray photoelectron spectra reveal that all of my films contain excess carbon, whose content decreases with increasing temperature. Based upon my results, I identify optimal growth temperatures for obtaining single-crystalline and epitaxial Zr and ZrC layers.

Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001).
Fankhauser, Joshua Paul.

Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001). - Ann Arbor : ProQuest Dissertations & Theses, 2016 - 41 p.

Source: Masters Abstracts International, Volume: 55-04.

Thesis (M.S.)--University of California, Los Angeles, 2016.

I report the growth of epitaxial Zr(0 0 0 1) and ZrC(1 1 1) thin films on Al2O3(0 0 0 1) via dc magnetron sputtering in an ultra-high vacuum deposition system equipped with facilities for chemical vapor deposition, low-energy electron diffraction, and Auger electron spectroscopy. Zr layers with a nominal thickness up to 270 nm are deposited at a rate of &sim;0.07 nm/s in 10 mTorr Ar (99.999%) atmosphere. ZrC layers with a nominal thickness up to 110 nm are deposited at a rate of &sim;0.06 nm/s in 10 mTorr atmosphere composed of 1 mTorr C2H4 (99.999%) and 9 mTorr Ar. As part of my thesis work, I investigate the effect of substrate temperature during sputter-deposition on the composition and crystallinity of the Zr and ZrC films. The as-deposited films are characterized in situ using Auger electron spectroscopy and low energy electron diffraction and ex situ using x-ray diffraction, transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. I deposited Zr thin films at temperatures between 600°C and 900°C. My x-ray diffraction studies reveal that increasing the substrate temperature during sputter-deposition of Zr leads to the growth of polycrystalline hexagonal close-packed structure Zr films. Cross-sectional transmission electron microscopy images reveal columnar growth and the formation of an interfacial layer, whose thickness increased with increasing temperature. Energy dispersive x-ray spectra obtained from this region reveal the presence of both Zr and Al. I attribute the formation of this interfacial layer to plasma-induced substrate decomposition followed by interdiffusion of Al and Zr at the film-substrate interface during sputtering. I deposited ZrC layers at temperatures between 800°C and 1400°C. X-ray diffraction data acquired from my samples indicate that the crystallinity improves with increasing temperature. X-ray photoelectron spectra reveal that all of my films contain excess carbon, whose content decreases with increasing temperature. Based upon my results, I identify optimal growth temperatures for obtaining single-crystalline and epitaxial Zr and ZrC layers.

ISBN: 9781339830506Subjects--Topical Terms:

366626
Materials science.

Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001).
LDR:02965nmm a2200265 4500 001 476214
005 20170614101406.5
008 181208s2016 ||||||||||||||||| ||eng d
020 $a 9781339830506
035 $a (MiAaPQ)AAI10124955
035 $a AAI10124955
040 $a MiAaPQ $c MiAaPQ
100 1 $a Fankhauser, Joshua Paul. $3 686776
245 1 0 $a Growth and Characterization of Zr and ZrC Thin Films on Al2O3(0001).
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2016
300 $a 41 p.
500 $a Source: Masters Abstracts International, Volume: 55-04.
500 $a Adviser: Suneel Kodambaka.
502 $a Thesis (M.S.)--University of California, Los Angeles, 2016.
520 $a I report the growth of epitaxial Zr(0 0 0 1) and ZrC(1 1 1) thin films on Al2O3(0 0 0 1) via dc magnetron sputtering in an ultra-high vacuum deposition system equipped with facilities for chemical vapor deposition, low-energy electron diffraction, and Auger electron spectroscopy. Zr layers with a nominal thickness up to 270 nm are deposited at a rate of &sim;0.07 nm/s in 10 mTorr Ar (99.999%) atmosphere. ZrC layers with a nominal thickness up to 110 nm are deposited at a rate of &sim;0.06 nm/s in 10 mTorr atmosphere composed of 1 mTorr C2H4 (99.999%) and 9 mTorr Ar. As part of my thesis work, I investigate the effect of substrate temperature during sputter-deposition on the composition and crystallinity of the Zr and ZrC films. The as-deposited films are characterized in situ using Auger electron spectroscopy and low energy electron diffraction and ex situ using x-ray diffraction, transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy. I deposited Zr thin films at temperatures between 600°C and 900°C. My x-ray diffraction studies reveal that increasing the substrate temperature during sputter-deposition of Zr leads to the growth of polycrystalline hexagonal close-packed structure Zr films. Cross-sectional transmission electron microscopy images reveal columnar growth and the formation of an interfacial layer, whose thickness increased with increasing temperature. Energy dispersive x-ray spectra obtained from this region reveal the presence of both Zr and Al. I attribute the formation of this interfacial layer to plasma-induced substrate decomposition followed by interdiffusion of Al and Zr at the film-substrate interface during sputtering. I deposited ZrC layers at temperatures between 800°C and 1400°C. X-ray diffraction data acquired from my samples indicate that the crystallinity improves with increasing temperature. X-ray photoelectron spectra reveal that all of my films contain excess carbon, whose content decreases with increasing temperature. Based upon my results, I identify optimal growth temperatures for obtaining single-crystalline and epitaxial Zr and ZrC layers.
590 $a School code: 0031.
650 4 $a Materials science. $3 366626
690 $a 0794
710 2 0 $a University of California, Los Angeles. $b Materials Science and Engineering 0328. $3 686777
773 0 $t Masters Abstracts International $g 55-04(E).
790 $a 0031
791 $a M.S.
792 $a 2016
793 $a English