大葉大學圖書館 |

Dispersion relations in heavily-doped nanostructures[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	537.622
書名/作者:	Dispersion relations in heavily-doped nanostructures/ by Kamakhya Prasad Ghatak.
作者:	Ghatak, Kamakhya Prasad.
出版者:	Cham : : Springer International Publishing :, 2016.
面頁冊數:	lv, 625 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Nanoscience.
標題:	Nanostructures.
標題:	Semiconductors.
標題:	Microwaves.
標題:	Optical engineering.
標題:	Nanotechnology.
標題:	Microwaves, RF and Optical Engineering.
標題:	Nanoscale Science and Technology.
標題:	Solid State Physics.
標題:	Physics.
標題:	Solid state physics.
ISBN:	9783319210001
ISBN:	9783319209999
內容註:	From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.
摘要、提要註:	This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
電子資源:	http://dx.doi.org/10.1007/978-3-319-21000-1

Dispersion relations in heavily-doped nanostructures[electronic resource] /
Ghatak, Kamakhya Prasad.

Dispersion relations in heavily-doped nanostructures[electronic resource] /by Kamakhya Prasad Ghatak. - Cham :Springer International Publishing :2016. - lv, 625 p. :ill., digital ;24 cm. - Springer tracts in modern physics,v.2650081-3869 ;. - Springer tracts in modern physics ;v.245..

From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

ISBN: 9783319210001

Standard No.: 10.1007/978-3-319-21000-1doiSubjects--Topical Terms:

339605
Nanoscience.

LC Class. No.: QC611

Dewey Class. No.: 537.622

Dispersion relations in heavily-doped nanostructures[electronic resource] /
LDR:02660nam a2200325 a 4500 001 455280
003 DE-He213
005 20160801102923.0
006 m d
007 cr nn 008maaau
008 161227s2016 gw s 0 eng d
020 $a 9783319210001 $q (electronic bk.)
020 $a 9783319209999 $q (paper)
024 7 $a 10.1007/978-3-319-21000-1 $2 doi
035 $a 978-3-319-21000-1
040 $a GP $c GP
041 0 $a eng
050 4 $a QC611
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008090 $2 bisacsh
082 0 4 $a 537.622 $2 23
090 $a QC611 $b .G411 2016
100 1 $a Ghatak, Kamakhya Prasad. $3 467732
245 1 0 $a Dispersion relations in heavily-doped nanostructures $h [electronic resource] / $c by Kamakhya Prasad Ghatak.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a lv, 625 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer tracts in modern physics, $x 0081-3869 ; $v v.265
505 0 $a From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.
520 $a This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
650 0 $a Nanoscience. $3 339605
650 0 $a Nanostructures. $3 238193
650 0 $a Semiconductors. $3 175080
650 0 $a Microwaves. $3 573551
650 0 $a Optical engineering. $3 624823
650 0 $a Nanotechnology. $3 192698
650 2 4 $a Microwaves, RF and Optical Engineering. $3 463864
650 2 4 $a Nanoscale Science and Technology. $3 464259
650 2 4 $a Solid State Physics. $3 463873
650 0 $a Physics. $3 171863
650 0 $a Solid state physics. $3 418421
710 2 $a SpringerLink (Online service) $3 463450
773 0 $t Springer eBooks
830 0 $a Springer tracts in modern physics ; $v v.245. $3 467789
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-21000-1
950 $a Physics and Astronomy (Springer-11651)