High-resolution spin-resolved photoe...
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  • High-resolution spin-resolved photoemission spectrometer and the Rashba effect in bismuth thin films[electronic resource] /
  • Record Type: Language materials, printed : Monograph/item
    [NT 15000414]: 530.417
    Title/Author: High-resolution spin-resolved photoemission spectrometer and the Rashba effect in bismuth thin films/ by Akari Takayama.
    Author: Takayama, Akari.
    Published: Tokyo : : Springer Japan :, 2015.
    Description: xii, 83 p. : : ill. (some col.), digital ;; 24 cm.
    Contained By: Springer eBooks
    Subject: Surfaces and Interfaces, Thin Films.
    Subject: Measurement Science and Instrumentation.
    Subject: Semiconductors.
    Subject: Thin films - Surfaces.
    Subject: Photoemission.
    Subject: Physics.
    Subject: Surface and Interface Science, Thin Films.
    Subject: Spectroscopy and Microscopy.
    ISBN: 9784431550280 (electronic bk.)
    ISBN: 9784431550273 (paper)
    [NT 15000228]: Introduction -- Basic Principle of Photoemission Spectroscopy and Spin Detector -- Development of High Resolution Spin-Resolved Photoemission Spectrometer -- Anomalous Rashba Effect of a Bi Thin Film on Si(111) -- Rashba Effect at Interface of a Bi Thin Film on Si(111) -- Conclusion.
    [NT 15000229]: In this thesis, the author has developed a high-resolution spin-resolved photoemission spectrometer that achieves the world-best energy resolution of 8 meV. The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons. The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect. Unlike the conventional Rashba splitting, an asymmetric in-plane spin polarization and a tremendous out-of-plane spin component were observed. Moreover, the author found that the spin polarization of Rashba surface states is reduced by decreasing the film thickness, which indicates the considerable interaction of Rashba spin-split states between the surface and Bi/Si interface.
    Online resource: http://dx.doi.org/10.1007/978-4-431-55028-0
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