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Dopants and defects in semiconductors /

Haller, Eugene E.

Dopants and defects in semiconductors /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	660/.2977
書名/作者:	Dopants and defects in semiconductors // Matthew D. McCluskey, Eugene E. Haller.
作者:	McCluskey, Matthew D.
其他作者:	Haller, Eugene E.
出版者:	Boca Raton, FL : : CRC Press/Taylor & Francis,, c2012.
面頁冊數:	xx, 370 p. : : ill. ;; 26 cm.
標題:	Semiconductor doping.
標題:	Semiconductors - Defects.
ISBN:	9781439831526 (hbk.) :
ISBN:	1439831521 (hbk.)
書目註:	Includes bibliographical references and index.
摘要、提要註:	"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"--Provided by publisher.

Dopants and defects in semiconductors /
McCluskey, Matthew D.

Dopants and defects in semiconductors /Matthew D. McCluskey, Eugene E. Haller. - Boca Raton, FL :CRC Press/Taylor & Francis,c2012. - xx, 370 p. :ill. ;26 cm.

Includes bibliographical references and index.

"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"--Provided by publisher.

ISBN: 9781439831526 (hbk.) :NTD 3,040

LCCN: 2012000323Subjects--Topical Terms:

498970
Semiconductor doping.

LC Class. No.: TK7871.85 / .M3984 2012

Dewey Class. No.: 660/.2977

Dopants and defects in semiconductors /
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020 $a 1439831521 (hbk.)
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100 1 $a McCluskey, Matthew D. $3 498968
245 1 0 $a Dopants and defects in semiconductors / $c Matthew D. McCluskey, Eugene E. Haller.
260 $a Boca Raton, FL : $b CRC Press/Taylor & Francis, $c c2012.
300 $a xx, 370 p. : $b ill. ; $c 26 cm.
504 $a Includes bibliographical references and index.
520 $a "Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"--Provided by publisher.
650 0 $a Semiconductor doping. $3 498970
650 0 $a Semiconductors $x Defects. $3 498971
700 1 $a Haller, Eugene E. $3 498969