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Tunneling field effect transistor te...

Chan, Mansun.

Tunneling field effect transistor technology[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.3815284
書名/作者:	Tunneling field effect transistor technology/ edited by Lining Zhang, Mansun Chan.
其他作者:	Zhang, Lining.
出版者:	Cham : : Springer International Publishing :, 2016.
面頁冊數:	ix, 213 p. : : ill. (some col.), digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Field-effect transistors.
標題:	Engineering.
標題:	Circuits and Systems.
標題:	Electronic Circuits and Devices.
標題:	Electronics and Microelectronics, Instrumentation.
ISBN:	9783319316536
ISBN:	9783319316512
摘要、提要註:	This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
電子資源:	http://dx.doi.org/10.1007/978-3-319-31653-6

Tunneling field effect transistor technology[electronic resource] /
Tunneling field effect transistor technology[electronic resource] /edited by Lining Zhang, Mansun Chan. - Cham :Springer International Publishing :2016. - ix, 213 p. :ill. (some col.), digital ;24 cm.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

ISBN: 9783319316536

Standard No.: 10.1007/978-3-319-31653-6doiSubjects--Topical Terms:

222710
Field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Tunneling field effect transistor technology[electronic resource] /
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245 0 0 $a Tunneling field effect transistor technology $h [electronic resource] / $c edited by Lining Zhang, Mansun Chan.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a ix, 213 p. : $b ill. (some col.), digital ; $c 24 cm.
520 $a This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
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650 1 4 $a Engineering. $3 372756
650 2 4 $a Circuits and Systems. $3 463473
650 2 4 $a Electronic Circuits and Devices. $3 463910
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 463474
700 1 $a Zhang, Lining. $3 640781
700 1 $a Chan, Mansun. $3 640782
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