言語:
日文
English
簡体中文
繁體中文
ヘルプ
ログイン
ホームページ
スイッチ:
ラベル
|
MARC形式
|
国際標準書誌記述(ISBD)
Defects and impurities in silicon ma...
~
Langouche, Guido.
Defects and impurities in silicon materials[electronic resource] :an introduction to atomic-level silicon engineering /
レコード種別:
言語・文字資料 (印刷物) : 単行資料
[NT 15000414] null:
620.193
タイトル / 著者:
Defects and impurities in silicon materials : an introduction to atomic-level silicon engineering // edited by Yutaka Yoshida, Guido Langouche.
その他の著者:
Yoshida, Yutaka.
出版された:
Tokyo : : Springer Japan :, 2015.
記述:
xv, 487 p. : : ill. (some col.), digital ;; 24 cm.
含まれています:
Springer eBooks
主題:
Silicon.
主題:
Nanosilicon.
主題:
Physics.
主題:
Solid state physics.
主題:
Nanoscience.
主題:
Nanostructures.
主題:
Semiconductors.
主題:
Nanotechnology.
主題:
Materials.
主題:
Materials Engineering.
主題:
Nanotechnology and Microengineering.
主題:
Solid State Physics.
主題:
Nanoscale Science and Technology.
国際標準図書番号 (ISBN) :
9784431558002
国際標準図書番号 (ISBN) :
9784431557999
[NT 15000228] null:
Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
[NT 15000229] null:
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
電子資源:
http://dx.doi.org/10.1007/978-4-431-55800-2
Defects and impurities in silicon materials[electronic resource] :an introduction to atomic-level silicon engineering /
Defects and impurities in silicon materials
an introduction to atomic-level silicon engineering /[electronic resource] :edited by Yutaka Yoshida, Guido Langouche. - Tokyo :Springer Japan :2015. - xv, 487 p. :ill. (some col.), digital ;24 cm. - Lecture notes in physics,v.9160075-8450 ;. - Lecture notes in physics ;v.830..
Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
ISBN: 9784431558002
Standard No.: 10.1007/978-4-431-55800-2doiSubjects--Topical Terms:
175799
Silicon.
LC Class. No.: TK7871.15.S55
Dewey Class. No.: 620.193
Defects and impurities in silicon materials[electronic resource] :an introduction to atomic-level silicon engineering /
LDR
:02510nam a2200325 a 4500
001
444839
003
DE-He213
005
20160530162217.0
006
m d
007
cr nn 008maaau
008
160715s2015 ja s 0 eng d
020
$a
9784431558002
$q
(electronic bk.)
020
$a
9784431557999
$q
(paper)
024
7
$a
10.1007/978-4-431-55800-2
$2
doi
035
$a
978-4-431-55800-2
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.15.S55
072
7
$a
TJFD5
$2
bicssc
072
7
$a
TEC008090
$2
bisacsh
082
0 4
$a
620.193
$2
23
090
$a
TK7871.15.S55
$b
D313 2015
245
0 0
$a
Defects and impurities in silicon materials
$h
[electronic resource] :
$b
an introduction to atomic-level silicon engineering /
$c
edited by Yutaka Yoshida, Guido Langouche.
260
$a
Tokyo :
$b
Springer Japan :
$b
Imprint: Springer,
$c
2015.
300
$a
xv, 487 p. :
$b
ill. (some col.), digital ;
$c
24 cm.
490
1
$a
Lecture notes in physics,
$x
0075-8450 ;
$v
v.916
505
0
$a
Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
520
$a
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
650
0
$a
Silicon.
$3
175799
650
0
$a
Nanosilicon.
$3
610956
650
0
$a
Physics.
$3
171863
650
0
$a
Solid state physics.
$3
418421
650
0
$a
Nanoscience.
$3
339605
650
0
$a
Nanostructures.
$3
238193
650
0
$a
Semiconductors.
$3
175080
650
0
$a
Nanotechnology.
$3
192698
650
0
$a
Materials.
$3
183582
650
2 4
$a
Materials Engineering.
$3
590541
650
2 4
$a
Nanotechnology and Microengineering.
$3
463475
650
2 4
$a
Solid State Physics.
$3
463873
650
2 4
$a
Nanoscale Science and Technology.
$3
464259
700
1
$a
Yoshida, Yutaka.
$3
636647
700
1
$a
Langouche, Guido.
$3
636648
710
2
$a
SpringerLink (Online service)
$3
463450
773
0
$t
Springer eBooks
830
0
$a
Lecture notes in physics ;
$v
v.830.
$3
464212
856
4 0
$u
http://dx.doi.org/10.1007/978-4-431-55800-2
950
$a
Physics and Astronomy (Springer-11651)
~に基づいて 0 論評
マルチメディア (複合媒体資料)
マルチメディアファイル
http://dx.doi.org/10.1007/978-4-431-55800-2
論評
論評を追加
あなたの考えを共有してください。
Export
受取館
処理
...
パスワードを変更する
ログイン