Relationship between structure and m...
Rodriguez, Clara Guglieri.

 

  • Relationship between structure and magnetic behaviour in ZnO-based systems[electronic resource] /
  • 紀錄類型: 書目-語言資料,印刷品 : Monograph/item
    杜威分類號: 621.34
    書名/作者: Relationship between structure and magnetic behaviour in ZnO-based systems/ by Clara Guglieri Rodriguez.
    作者: Rodriguez, Clara Guglieri.
    出版者: Cham : : Springer International Publishing :, 2015.
    面頁冊數: xiv, 146 p. : : ill., digital ;; 24 cm.
    Contained By: Springer eBooks
    標題: Surface and Interface Science, Thin Films.
    標題: Magnetic materials.
    標題: Physics.
    標題: Magnetism, Magnetic Materials.
    標題: Surfaces and Interfaces, Thin Films.
    標題: Quantum Information Technology, Spintronics.
    標題: Semiconductors.
    ISBN: 9783319188874 (electronic bk.)
    ISBN: 9783319188867 (paper)
    內容註: Introduction -- Synthesis and In-House Characterization -- XAS and XMCD Spectroscopies -- Zinc K-Edge X-Ray Absorption Study -- Zinc K-Edge XMCD Study -- Soft X-Ray XAS and XMCD Study -- Summary and Conclusions -- Appendices -- Bibliography.
    摘要、提要註: This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM) Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.
    電子資源: http://dx.doi.org/10.1007/978-3-319-18887-4
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