X-ray absorption spectroscopy of sem...
Ridgway, Mark C.

 

  • X-ray absorption spectroscopy of semiconductors[electronic resource] /
  • 紀錄類型: 書目-語言資料,印刷品 : Monograph/item
    杜威分類號: 621.31852
    書名/作者: X-ray absorption spectroscopy of semiconductors/ edited by Claudia S. Schnohr, Mark C. Ridgway.
    其他作者: Schnohr, Claudia S.
    出版者: Berlin, Heidelberg : : Springer Berlin Heidelberg :, 2015.
    面頁冊數: xvi, 361 p. : : ill. (some col.), digital ;; 24 cm.
    Contained By: Springer eBooks
    標題: Semiconductors - Testing.
    標題: X-rays - Industrial applications.
    標題: X-ray spectroscopy.
    標題: Physics.
    標題: Semiconductors.
    標題: Optical and Electronic Materials.
    標題: Spectroscopy and Microscopy.
    標題: Characterization and Evaluation of Materials.
    標題: Applied and Technical Physics.
    標題: Optics and Electrodynamics.
    ISBN: 9783662443620 (electronic bk.)
    ISBN: 9783662443613 (paper)
    內容註: Introduction to XAS -- Crystalline Semiconductors -- Disordered Semiconductors.-- Nanostructures -- Magnetic Semiconductors.
    摘要、提要註: X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
    電子資源: http://dx.doi.org/10.1007/978-3-662-44362-0
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