語系:
繁體中文
English
日文
簡体中文
說明(常見問題)
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Einstein's photoemission[electronic ...
~
Ghatak, Kamakhya Prasad.
Einstein's photoemission[electronic resource] :emission from heavily-doped quantized structures /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
杜威分類號:
530.12
書名/作者:
Einstein's photoemission : emission from heavily-doped quantized structures // by Kamakhya Prasad Ghatak.
作者:
Ghatak, Kamakhya Prasad.
出版者:
Cham : : Springer International Publishing :, 2015.
面頁冊數:
xxxviii, 495 p. : : ill., digital ;; 24 cm.
Contained By:
Springer eBooks
標題:
Photoemission.
標題:
Physics.
標題:
Quantum theory.
標題:
Optical materials.
標題:
Nanotechnology.
標題:
Quantum Physics.
標題:
Optics, Optoelectronics, Plasmonics and Optical Devices.
標題:
Optical and Electronic Materials.
標題:
Nanoscale Science and Technology.
ISBN:
9783319111889 (electronic bk.)
ISBN:
9783319111872 (paper)
內容註:
From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors.
摘要、提要註:
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
電子資源:
http://dx.doi.org/10.1007/978-3-319-11188-9
Einstein's photoemission[electronic resource] :emission from heavily-doped quantized structures /
Ghatak, Kamakhya Prasad.
Einstein's photoemission
emission from heavily-doped quantized structures /[electronic resource] :by Kamakhya Prasad Ghatak. - Cham :Springer International Publishing :2015. - xxxviii, 495 p. :ill., digital ;24 cm. - Springer tracts in modern physics,v.2620081-3869 ;. - Springer tracts in modern physics ;v.245..
From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors.
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
ISBN: 9783319111889 (electronic bk.)
Standard No.: 10.1007/978-3-319-11188-9doiSubjects--Topical Terms:
602987
Photoemission.
LC Class. No.: QC715.15
Dewey Class. No.: 530.12
Einstein's photoemission[electronic resource] :emission from heavily-doped quantized structures /
LDR
:03072nam a2200325 a 4500
001
425762
003
DE-He213
005
20150721153206.0
006
m d
007
cr nn 008maaau
008
151119s2015 gw s 0 eng d
020
$a
9783319111889 (electronic bk.)
020
$a
9783319111872 (paper)
024
7
$a
10.1007/978-3-319-11188-9
$2
doi
035
$a
978-3-319-11188-9
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
QC715.15
072
7
$a
PHQ
$2
bicssc
072
7
$a
SCI057000
$2
bisacsh
082
0 4
$a
530.12
$2
23
090
$a
QC715.15
$b
.G411 2015
100
1
$a
Ghatak, Kamakhya Prasad.
$3
467732
245
1 0
$a
Einstein's photoemission
$h
[electronic resource] :
$b
emission from heavily-doped quantized structures /
$c
by Kamakhya Prasad Ghatak.
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2015.
300
$a
xxxviii, 495 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer tracts in modern physics,
$x
0081-3869 ;
$v
v.262
505
0
$a
From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors.
520
$a
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
650
0
$a
Photoemission.
$3
602987
650
0
$a
Physics.
$3
171863
650
0
$a
Quantum theory.
$3
183621
650
0
$a
Optical materials.
$3
452595
650
0
$a
Nanotechnology.
$3
192698
650
2 4
$a
Quantum Physics.
$3
464237
650
2 4
$a
Optics, Optoelectronics, Plasmonics and Optical Devices.
$3
464661
650
2 4
$a
Optical and Electronic Materials.
$3
463742
650
2 4
$a
Nanoscale Science and Technology.
$3
464259
710
2
$a
SpringerLink (Online service)
$3
463450
773
0
$t
Springer eBooks
830
0
$a
Springer tracts in modern physics ;
$v
v.245.
$3
467789
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-11188-9
950
$a
Physics and Astronomy (Springer-11651)
筆 0 讀者評論
多媒體
多媒體檔案
http://dx.doi.org/10.1007/978-3-319-11188-9
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼
登入