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Heavily-doped 2D-quantized structures and the Einstein relation[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	537.622
書名/作者:	Heavily-doped 2D-quantized structures and the Einstein relation/ by Kamakhya P. Ghatak, Sitangshu Bhattacharya.
作者:	Ghatak, Kamakhya P.
其他作者:	Bhattacharya, Sitangshu.
出版者:	Cham : : Springer International Publishing :, 2015.
面頁冊數:	xl, 347 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Doped semiconductors.
標題:	Nanotechnology.
標題:	Physics.
標題:	Solid State Physics.
標題:	Nanotechnology and Microengineering.
標題:	Optical and Electronic Materials.
標題:	Semiconductors.
標題:	Nanoscale Science and Technology.
ISBN:	9783319083803 (electronic bk.)
ISBN:	9783319083797 (paper)
內容註:	From the Contents: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The ER in NIPI Structures of HD Non-Parabolic Semiconductors -- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors -- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications -- Conclusion and Scope for Future.
摘要、提要註:	This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
電子資源:	http://dx.doi.org/10.1007/978-3-319-08380-3

Heavily-doped 2D-quantized structures and the Einstein relation[electronic resource] /
Ghatak, Kamakhya P.

Heavily-doped 2D-quantized structures and the Einstein relation[electronic resource] /by Kamakhya P. Ghatak, Sitangshu Bhattacharya. - Cham :Springer International Publishing :2015. - xl, 347 p. :ill., digital ;24 cm. - Springer tracts in modern physics,v.2600081-3869 ;. - Springer tracts in modern physics ;v.245..

From the Contents: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The ER in NIPI Structures of HD Non-Parabolic Semiconductors -- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors -- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications -- Conclusion and Scope for Future.

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

ISBN: 9783319083803 (electronic bk.)

Standard No.: 10.1007/978-3-319-08380-3doiSubjects--Topical Terms:

602211
Doped semiconductors.

LC Class. No.: QC611.8.D66

Dewey Class. No.: 537.622

Heavily-doped 2D-quantized structures and the Einstein relation[electronic resource] /
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