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Mask fabrication and its application...

Cheng, Yang-Chun.

Mask fabrication and its applications to extreme ultra-violet diffractive optics.

レコード種別:	言語・文字資料 (印刷物) : 単行資料
タイトル / 著者:	Mask fabrication and its applications to extreme ultra-violet diffractive optics.
著者:	Cheng, Yang-Chun.
記述:	178 p.
注記:	Source: Dissertation Abstracts International, Volume: 70-07, Section: B, page: 4417.
含まれています:	Dissertation Abstracts International70-07B.
主題:	Engineering, Materials Science.
国際標準図書番号 (ISBN) :	9781109282641
[NT 15000229] null:	Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3367505

Mask fabrication and its applications to extreme ultra-violet diffractive optics.
Cheng, Yang-Chun.

Mask fabrication and its applications to extreme ultra-violet diffractive optics. - 178 p.

Source: Dissertation Abstracts International, Volume: 70-07, Section: B, page: 4417.

Thesis (Ph.D.)--The University of Wisconsin - Madison, 2009.

Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.

ISBN: 9781109282641Subjects--Topical Terms:

422974
Engineering, Materials Science.

Mask fabrication and its applications to extreme ultra-violet diffractive optics.
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020 $a 9781109282641
035 $a (UMI)AAI3367505
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040 $a UMI $c UMI
100 1 $a Cheng, Yang-Chun. $3 423144
245 1 0 $a Mask fabrication and its applications to extreme ultra-violet diffractive optics.
300 $a 178 p.
500 $a Source: Dissertation Abstracts International, Volume: 70-07, Section: B, page: 4417.
500 $a Adviser: Franco Cerrina.
502 $a Thesis (Ph.D.)--The University of Wisconsin - Madison, 2009.
520 $a Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.
590 $a School code: 0262.
650 4 $a Engineering, Materials Science. $3 422974
690 $a 0794
710 2 $a The University of Wisconsin - Madison. $3 423112
773 0 $t Dissertation Abstracts International $g 70-07B.
790 1 0 $a Cerrina, Franco, $e advisor
790 $a 0262
791 $a Ph.D.
792 $a 2009
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3367505

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