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Process and device simulation for MO...

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Antognetti Paolo

Process and device simulation for MOS-VLSI circuits

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Process and device simulation for MOS-VLSI circuits/ Antognetti, Paolo;Antoniadis, Dimitri A.;Dutton, Robert W. [et al]
Author:	Antognetti Paolo
other author:	Antoniadis Dimitri A.
Published:	Boston : Martinus Nijhoff Publishers, 1983
Description:	619頁; 24x16公分
Subject:	Integrated circuits-Very...
Subject:	Metal oxide semiconductors-...
ISBN:	902472824X(精裝)

Process and device simulation for MOS-VLSI circuits
Antognetti Paolo

Process and device simulation for MOS-VLSI circuitsAntognetti, Paolo;Antoniadis, Dimitri A.;Dutton, Robert W. [et al] - BostonMartinus Nijhoff Publishers1983 - 619頁24x16公分

ISBN: 902472824X(精裝)Subjects--Topical Terms:

140539
Integrated circuits-Very...

Process and device simulation for MOS-VLSI circuits
LDR:00403nam 2200133 450 001 165666
008 100623t1983 us a a 000 0 eng d
020 $a 902472824X(精裝)
035 $a 8518911
040 $b eng $c DYU
041 $a eng
044 $a us
100 $a Antognetti Paolo $3 167275
245 1 0 $a Process and device simulation for MOS-VLSI circuits $c Antognetti, Paolo;Antoniadis, Dimitri A.;Dutton, Robert W. [et al]
260 $a Boston $b Martinus Nijhoff Publishers $c 1983
300 $a 619頁 $c 24x16公分
650 $a Integrated circuits-Very... $3 140539
650 $a Metal oxide semiconductors-... $3 143370
700 $a Antoniadis Dimitri A. $3 167276
700 $a Dutton Robert W. [et al] $3 167277

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801621381700105

四樓西文圖書區

1.圖書流通

圖書

621.3817 AN88

1.一般(Normal)

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1 records • Pages 1 •
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