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Modeling and electrothermal simulation of SiC power devices[electronic resource] :using Silvaco Atlas /

紀錄類型:	書目-電子資源 : Monograph/item
杜威分類號:	621.3815/2
書名/作者:	Modeling and electrothermal simulation of SiC power devices : using Silvaco Atlas // Bejoy N. Pushpakaran, Stephen B. Bayne.
作者:	Pushpakaran, Bejoy
其他作者:	Bayne, Stephen
出版者:	Singapore : : World Scientific Publishing,, c2019.
面頁冊數:	1 online resource (464 p.) : : ill.
標題:	Wide gap semiconductors.
標題:	Silicon carbide.
ISBN:	9789813237834
書目註:	Includes bibliographical references and index.
摘要、提要註:	"The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco ATLAS to simulate SiC power device structure, as well as supplementary material for download."--
電子資源:	https://www.worldscientific.com/worldscibooks/10.1142/10929#t=toc

Modeling and electrothermal simulation of SiC power devices[electronic resource] :using Silvaco Atlas /
Pushpakaran, Bejoy

Modeling and electrothermal simulation of SiC power devicesusing Silvaco Atlas /[electronic resource] :Bejoy N. Pushpakaran, Stephen B. Bayne. - 1st ed. - Singapore :World Scientific Publishing,c2019. - 1 online resource (464 p.) :ill.

Includes bibliographical references and index.

"The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco ATLAS to simulate SiC power device structure, as well as supplementary material for download."--

ISBN: 9789813237834Subjects--Uniform Titles:

ATLAS TCAD (Computer program)
Subjects--Topical Terms:

710616
Wide gap semiconductors.

LC Class. No.: QC611.8.W53 / P87 2019

Dewey Class. No.: 621.3815/2

Modeling and electrothermal simulation of SiC power devices[electronic resource] :using Silvaco Atlas /
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245 1 0 $a Modeling and electrothermal simulation of SiC power devices $h [electronic resource] : $b using Silvaco Atlas / $c Bejoy N. Pushpakaran, Stephen B. Bayne.
250 $a 1st ed.
260 $a Singapore : $b World Scientific Publishing, $c c2019.
300 $a 1 online resource (464 p.) : $b ill.
504 $a Includes bibliographical references and index.
520 $a "The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco ATLAS to simulate SiC power device structure, as well as supplementary material for download."-- $c Publisher's website.
588 $a Title from web page (viewed April 4, 2019)
630 0 0 $a ATLAS TCAD (Computer program) $3 710617
650 0 $a Wide gap semiconductors. $3 710616
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