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Emerging resistive switching memories[electronic resource] /

紀錄類型:	書目-電子資源 : Monograph/item
杜威分類號:	621.3973
書名/作者:	Emerging resistive switching memories/ by Jianyong Ouyang.
作者:	Ouyang, Jianyong.
出版者:	Cham : : Springer International Publishing :, 2016.
面頁冊數:	viii, 93 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Nonvolatile random-access memory.
標題:	Materials Science.
標題:	Nanotechnology.
標題:	Electronic Circuits and Devices.
標題:	Electronics and Microelectronics, Instrumentation.
標題:	Memory Structures.
ISBN:	9783319315720
ISBN:	9783319315706
內容註:	Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
摘要、提要註:	This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
電子資源:	http://dx.doi.org/10.1007/978-3-319-31572-0

Emerging resistive switching memories[electronic resource] /
Ouyang, Jianyong.

Emerging resistive switching memories[electronic resource] /by Jianyong Ouyang. - Cham :Springer International Publishing :2016. - viii, 93 p. :ill., digital ;24 cm. - SpringerBriefs in materials,2192-1091. - SpringerBriefs in materials..

Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

ISBN: 9783319315720

Standard No.: 10.1007/978-3-319-31572-0doiSubjects--Topical Terms:

617869
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.3973

Emerging resistive switching memories[electronic resource] /
LDR:02062nmm a2200337 a 4500 001 461993
003 DE-He213
005 20161214114926.0
006 m d
007 cr nn 008maaau
008 170223s2016 gw s 0 eng d
020 $a 9783319315720 $q (electronic bk.)
020 $a 9783319315706 $q (paper)
024 7 $a 10.1007/978-3-319-31572-0 $2 doi
035 $a 978-3-319-31572-0
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7895.M4
072 7 $a TBN $2 bicssc
072 7 $a TEC027000 $2 bisacsh
072 7 $a SCI050000 $2 bisacsh
082 0 4 $a 621.3973 $2 23
090 $a TK7895.M4 $b O95 2016
100 1 $a Ouyang, Jianyong. $3 666205
245 1 0 $a Emerging resistive switching memories $h [electronic resource] / $c by Jianyong Ouyang.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a viii, 93 p. : $b ill., digital ; $c 24 cm.
490 1 $a SpringerBriefs in materials, $x 2192-1091
505 0 $a Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
520 $a This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
650 0 $a Nonvolatile random-access memory. $3 617869
650 1 4 $a Materials Science. $3 463741
650 2 4 $a Nanotechnology. $3 192698
650 2 4 $a Electronic Circuits and Devices. $3 463910
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 463474
650 2 4 $a Memory Structures. $3 510735
710 2 $a SpringerLink (Online service) $3 463450
773 0 $t Springer eBooks
830 0 $a SpringerBriefs in materials. $3 465481
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-31572-0
950 $a Chemistry and Materials Science (Springer-11644)