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Silicon nanowire transistors[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.3815
書名/作者:	Silicon nanowire transistors/ by Ahmet Bindal, Sotoudeh Hamedi-Hagh.
作者:	Bindal, Ahmet.
其他作者:	Hamedi-Hagh, Sotoudeh.
出版者:	Cham : : Springer International Publishing :, 2016.
面頁冊數:	xiv, 165 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Nanowires.
標題:	Nanosilicon.
標題:	Transistors.
標題:	Engineering.
標題:	Circuits and Systems.
標題:	Electronic Circuits and Devices.
標題:	Nanotechnology.
ISBN:	9783319271774
ISBN:	9783319271750
內容註:	Dual Work Function Silicon Nanowire MOS Transistors -- Single Work Function Silicon Nanowire MOS Transistors -- Spice Modeling For Analog and Digital Applications -- High-Speed Analog Applications -- Radio Frequency (RF) Applications -- SRAM Mega Cell Design for Digital Applications -- Field-Programmable-Gate-Array (FPGA) -- Integrate-And-Fire Spiking (IFS) Neuron -- Direct Sequence Spread Spectrum (DSSS) Base-Band Transmitter.
摘要、提要註:	This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology's true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.
電子資源:	http://dx.doi.org/10.1007/978-3-319-27177-4

Silicon nanowire transistors[electronic resource] /
Bindal, Ahmet.

Silicon nanowire transistors[electronic resource] /by Ahmet Bindal, Sotoudeh Hamedi-Hagh. - Cham :Springer International Publishing :2016. - xiv, 165 p. :ill., digital ;24 cm.

Dual Work Function Silicon Nanowire MOS Transistors -- Single Work Function Silicon Nanowire MOS Transistors -- Spice Modeling For Analog and Digital Applications -- High-Speed Analog Applications -- Radio Frequency (RF) Applications -- SRAM Mega Cell Design for Digital Applications -- Field-Programmable-Gate-Array (FPGA) -- Integrate-And-Fire Spiking (IFS) Neuron -- Direct Sequence Spread Spectrum (DSSS) Base-Band Transmitter.

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology's true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.

ISBN: 9783319271774

Standard No.: 10.1007/978-3-319-27177-4doiSubjects--Topical Terms:

558832
Nanowires.

LC Class. No.: TK7874.85

Dewey Class. No.: 621.3815

Silicon nanowire transistors[electronic resource] /
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