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Field-effect self-mixing terahertz detectors[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.3813
書名/作者:	Field-effect self-mixing terahertz detectors/ by Jiandong Sun.
作者:	Sun, Jiandong.
出版者:	Berlin, Heidelberg : : Springer Berlin Heidelberg :, 2016.
面頁冊數:	xviii, 126 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Terahertz technology.
標題:	Engineering.
標題:	Microwaves, RF and Optical Engineering.
標題:	Optics, Optoelectronics, Plasmonics and Optical Devices.
標題:	Semiconductors.
標題:	Solid State Physics.
ISBN:	9783662486818
ISBN:	9783662486795
內容註:	Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
摘要、提要註:	A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
電子資源:	http://dx.doi.org/10.1007/978-3-662-48681-8

Field-effect self-mixing terahertz detectors[electronic resource] /
Sun, Jiandong.

Field-effect self-mixing terahertz detectors[electronic resource] /by Jiandong Sun. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xviii, 126 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

ISBN: 9783662486818

Standard No.: 10.1007/978-3-662-48681-8doiSubjects--Topical Terms:

342220
Terahertz technology.

LC Class. No.: TK7877

Dewey Class. No.: 621.3813

Field-effect self-mixing terahertz detectors[electronic resource] /
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520 $a A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
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