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The source/drain engineering of nano...

Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.38152
書名/作者:	The source/drain engineering of nanoscale Germanium-based MOS devices/ by Zhiqiang Li.
作者:	Li, Zhiqiang.
出版者:	Berlin, Heidelberg : : Springer Berlin Heidelberg :, 2016.
面頁冊數:	xiv, 59 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductor field-effect transistors.
標題:	Metal oxide semiconductors, Complementary.
標題:	Germanium - Electric properties.
標題:	Physics.
標題:	Semiconductors.
標題:	Electronic Circuits and Devices.
標題:	Nanoscale Science and Technology.
標題:	Solid State Physics.
ISBN:	9783662496831
ISBN:	9783662496817
內容註:	Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
電子資源:	http://dx.doi.org/10.1007/978-3-662-49683-1

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /
Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /by Zhiqiang Li. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xiv, 59 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.

ISBN: 9783662496831

Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:

339142
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.38152

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /
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505 0 $a Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
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