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Charge-trapping non-volatile memorie...

Dimitrakis, Panagiotis.

Charge-trapping non-volatile memories.[electronic resource] /Volume 1,Basic and advanced devices

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	620.5
書名/作者:	Charge-trapping non-volatile memories./ edited by Panagiotis Dimitrakis.
其他題名:	Basic and advanced devices
其他作者:	Dimitrakis, Panagiotis.
出版者:	Cham : : Springer International Publishing :, 2015.
面頁冊數:	ix, 211 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Nonvolatile random-access memory.
標題:	Materials Science.
標題:	Nanotechnology.
標題:	Electronic Circuits and Devices.
標題:	Electronics and Microelectronics, Instrumentation.
標題:	Memory Structures.
ISBN:	9783319152905
ISBN:	9783319152899
內容註:	Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.
摘要、提要註:	This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
電子資源:	http://dx.doi.org/10.1007/978-3-319-15290-5

Charge-trapping non-volatile memories.[electronic resource] /Volume 1,Basic and advanced devices
Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices[electronic resource] /Basic and advanced devicesedited by Panagiotis Dimitrakis. - Cham :Springer International Publishing :2015. - ix, 211 p. :ill., digital ;24 cm.

Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.

This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

ISBN: 9783319152905

Standard No.: 10.1007/978-3-319-15290-5doiSubjects--Topical Terms:

617869
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 620.5

Charge-trapping non-volatile memories.[electronic resource] /Volume 1,Basic and advanced devices
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