大葉大學圖書館 |

Physics of semiconductor devices[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	537.622
書名/作者:	Physics of semiconductor devices/ by Massimo Rudan.
作者:	Rudan, Massimo.
出版者:	New York, NY : : Springer New York :, 2015.
面頁冊數:	xxiii, 649 p. : : ill., digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Semiconductors.
標題:	Quantum theory.
標題:	Engineering.
標題:	Circuits and Systems.
標題:	Electronics and Microelectronics, Instrumentation.
ISBN:	9781493911516 (electronic bk.)
ISBN:	9781493911509 (paper)
內容註:	Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics.
摘要、提要註:	This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
電子資源:	http://dx.doi.org/10.1007/978-1-4939-1151-6

Physics of semiconductor devices[electronic resource] /
Rudan, Massimo.

Physics of semiconductor devices[electronic resource] /by Massimo Rudan. - New York, NY :Springer New York :2015. - xxiii, 649 p. :ill., digital ;24 cm.

Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics.

This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.

ISBN: 9781493911516 (electronic bk.)

Standard No.: 10.1007/978-1-4939-1151-6doiSubjects--Topical Terms:

175080
Semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 537.622

Physics of semiconductor devices[electronic resource] /
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505 0 $a Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics.
520 $a This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
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