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Arbitrary modeling of TSVs for 3D integrated circuits[electronic resource] /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
杜威分類號:	621.3815
書名/作者:	Arbitrary modeling of TSVs for 3D integrated circuits/ by Khaled Salah, Yehea Ismail, Alaa El-Rouby.
作者:	Salah, Khaled.
其他作者:	Ismail, Yehea.
出版者:	Cham : : Springer International Publishing :, 2015.
面頁冊數:	ix, 179 p. : : ill. (some col.), digital ;; 24 cm.
Contained By:	Springer eBooks
標題:	Three-dimensional integrated circuits - Mathematical models.
標題:	Engineering.
標題:	Circuits and Systems.
標題:	Electronics and Microelectronics, Instrumentation.
標題:	Processor Architectures.
ISBN:	9783319076119 (electronic bk.)
ISBN:	9783319076102 (paper)
內容註:	Introduction: Work around Moore's Law -- 3D/TSV Enabling Technologies -- TSV Modeling and Analysis -- TSV Verification -- TSV Macro-Modeling Framework -- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter -- Imperfection in TSV Modeling -- New Trends in TSV -- TSV Fabrication -- Conclusions.
摘要、提要註:	This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, and inductive-based communication system, and bandpass filtering. Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; Enables readers to use a model which is technology dependent and can be used for any TSV configuration; Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; Equips readers for fast parasitic extraction of TSVs for 3D IC design.
電子資源:	http://dx.doi.org/10.1007/978-3-319-07611-9

Arbitrary modeling of TSVs for 3D integrated circuits[electronic resource] /
Salah, Khaled.

Arbitrary modeling of TSVs for 3D integrated circuits[electronic resource] /by Khaled Salah, Yehea Ismail, Alaa El-Rouby. - Cham :Springer International Publishing :2015. - ix, 179 p. :ill. (some col.), digital ;24 cm. - Analog circuits and signal processing,1872-082X. - Analog circuits and signal processing..

Introduction: Work around Moore's Law -- 3D/TSV Enabling Technologies -- TSV Modeling and Analysis -- TSV Verification -- TSV Macro-Modeling Framework -- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter -- Imperfection in TSV Modeling -- New Trends in TSV -- TSV Fabrication -- Conclusions.

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, and inductive-based communication system, and bandpass filtering. Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; Enables readers to use a model which is technology dependent and can be used for any TSV configuration; Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; Equips readers for fast parasitic extraction of TSVs for 3D IC design.

ISBN: 9783319076119 (electronic bk.)

Standard No.: 10.1007/978-3-319-07611-9doiSubjects--Topical Terms:

602307
Three-dimensional integrated circuits
--Mathematical models.

LC Class. No.: TK7874.893

Dewey Class. No.: 621.3815

Arbitrary modeling of TSVs for 3D integrated circuits[electronic resource] /
LDR:02503nam a2200325 a 4500 001 424474
003 DE-He213
005 20150521085555.0
006 m d
007 cr nn 008maaau
008 151119s2015 gw s 0 eng d
020 $a 9783319076119 (electronic bk.)
020 $a 9783319076102 (paper)
024 7 $a 10.1007/978-3-319-07611-9 $2 doi
035 $a 978-3-319-07611-9
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7874.893
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
082 0 4 $a 621.3815 $2 23
090 $a TK7874.893 $b .S159 2015
100 1 $a Salah, Khaled. $3 602304
245 1 0 $a Arbitrary modeling of TSVs for 3D integrated circuits $h [electronic resource] / $c by Khaled Salah, Yehea Ismail, Alaa El-Rouby.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2015.
300 $a ix, 179 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Analog circuits and signal processing, $x 1872-082X
505 0 $a Introduction: Work around Moore's Law -- 3D/TSV Enabling Technologies -- TSV Modeling and Analysis -- TSV Verification -- TSV Macro-Modeling Framework -- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter -- Imperfection in TSV Modeling -- New Trends in TSV -- TSV Fabrication -- Conclusions.
520 $a This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, and inductive-based communication system, and bandpass filtering. Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; Enables readers to use a model which is technology dependent and can be used for any TSV configuration; Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; Equips readers for fast parasitic extraction of TSVs for 3D IC design.
650 0 $a Three-dimensional integrated circuits $x Mathematical models. $3 602307
650 1 4 $a Engineering. $3 372756
650 2 4 $a Circuits and Systems. $3 463473
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 463474
650 2 4 $a Processor Architectures. $3 463933
700 1 $a Ismail, Yehea. $3 602305
700 1 $a El-Rouby, Alaa. $3 602306
710 2 $a SpringerLink (Online service) $3 463450
773 0 $t Springer eBooks
830 0 $a Analog circuits and signal processing. $3 464646
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-07611-9
950 $a Engineering (Springer-11647)