Novel nanowire heterostructures for ...
Harvard University.

 

  • Novel nanowire heterostructures for nanoelectronic applications.
  • 紀錄類型: 書目-語言資料,印刷品 : Monograph/item
    書名/作者: Novel nanowire heterostructures for nanoelectronic applications.
    作者: Yan, Hao.
    面頁冊數: 126 p.
    附註: Source: Dissertation Abstracts International, Volume: 72-01, Section: B, page: .
    Contained By: Dissertation Abstracts International72-01B.
    標題: Chemistry, General.
    標題: Chemistry, Physical.
    標題: Nanotechnology.
    標題: Engineering, Materials Science.
    ISBN: 9781124339085
    摘要、提要註: Semiconductor nanowires are promising candidates for future nanoelectronic devices. Integration of functional materials into nanowires in the form of nanowire heterostructures can give them unique properties and novel device applications. This thesis deals with the synthesis, characterization and electronic application of core/shell nanowire heterostructures. First, a novel approach to the core/shell heterostructure, namely the atomic layer deposition (ALD) is introduced to deposit high-dielectric-constant (high-k) oxide, perovskite oxide and metal. The excellent conformality of ALD allows these materials to form uniform shells on semiconductor nanowire cores. The electrical and magnetic properties of Si/ZrO2/Ni core/shell/shell nanowires are further investigated, which shows metallic conductivity and axial alignment in a magnetic field.
    電子資源: http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3435429
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