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Integrated power devices and TCAD si...

Fu, Yue.

Integrated power devices and TCAD simulation[electronic resource] /

紀錄類型:	書目-電子資源 : Monograph/item
杜威分類號:	621.3815
書名/作者:	Integrated power devices and TCAD simulation/ Yue Fu ... [et al.].
其他作者:	Fu, Yue.
出版者:	Boca Raton : : CRC Press, Taylor & Francis Group,, c2014.
面頁冊數:	1 online resource : : ill.
標題:	Power semiconductors - Computer-aided design.
標題:	Three-dimensional imaging.
ISBN:	9781466583832
ISBN:	9781315215822
ISBN:	9781351823029
書目註:	Includes bibliographical references and index.
摘要、提要註:	From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. --Provided by publisher.
電子資源:	https://www.taylorfrancis.com/books/9781466583832

Integrated power devices and TCAD simulation[electronic resource] /
Integrated power devices and TCAD simulation[electronic resource] /Yue Fu ... [et al.]. - 1st ed. - Boca Raton :CRC Press, Taylor & Francis Group,c2014. - 1 online resource :ill. - Devices, circuits, and systems. - Devices, circuits, and systems..

Includes bibliographical references and index.

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. --Provided by publisher.

ISBN: 9781466583832Subjects--Topical Terms:

709150
Power semiconductors
--Computer-aided design.

LC Class. No.: TK7871.85 / .F794 2014

Dewey Class. No.: 621.3815

Integrated power devices and TCAD simulation[electronic resource] /
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245 0 0 $a Integrated power devices and TCAD simulation $h [electronic resource] / $c Yue Fu ... [et al.].
250 $a 1st ed.
260 $a Boca Raton : $b CRC Press, Taylor & Francis Group, $c c2014.
300 $a 1 online resource : $b ill.
490 1 $a Devices, circuits, and systems
504 $a Includes bibliographical references and index.
520 $a From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. --Provided by publisher.
588 $a Description based on print version record.
650 0 $a Power semiconductors $x Computer-aided design. $3 709150
650 0 $a Three-dimensional imaging. $3 443083
700 1 $a Fu, Yue. $3 463896
830 0 $a Devices, circuits, and systems. $3 558685
856 4 0 $u https://www.taylorfrancis.com/books/9781466583832

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