| 內容註: |
Molecular beam epitaxy (MBE) growth of nitride semiconductors / Qiandong Zhuang -- MOCVD growth of nitride semiconductors / Koh Matsumoto, Yoshiki Yano, Hiroki Tokunaga, Akinori Ubukata, Guanxi Piao, Akira Mishima, Tadakazu Ikenaga, Yuji Tomita, Toshiya Tabuchi -- GaN on sapphire substrates for visible light-emitting diodes / Jae-Hyun Ryou, Wonseok Lee -- Gallium nitride (GaN) on silicon substrates for LEDs / Matthew H. Kane, Nazmul Arefin -- Phosphors for white LEDs / Zhanchao Wu, Zhiguo Xia -- Recent development of fabrication technologies of nitride LEDs for performance improvement / Ray-Hua Horng, Dong-Sing Wuu, Chia-Feng Lin, Chun-Feng Lai -- Nanostructured LED / Chien-Chung Lin, Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Yu-Pin Lan, JianJang huang, Hao-Chung Kuo -- Nonpolar and semipolar LEDs / Yuh-Renn Wu, C.-Y. Huang, Yuji Zhao, James Speck -- Efficiency droop in GaInN/GaN LEDs / Houqiag Fu, Yuji Zhao -- Photonic crystal nitride LEDs / Martin D.B. Charlton -- Nitride LEDs based on quantum wells and quantum dots / J. Verma, S.M. Islan, A. Verma, V. Protasenko, D. Jena -- Colour tuneable LEDs and pixelated micro-LED arrays / Yuk Fai Cheung, Zetao Ma, Hoi Wai Choi -- Reliability of nitride LEDs / Tzung-Te Chen, Chun-Fan Dai, Chien-Ping Wang, Han-Kuei Fu, Pei-ting Chou, Wen-Yung Yeh -- Physical mechanisms limiting the performance and the reliability of GaN-based LEDs / Carlo De Santi, Matteo Meneghini, Alberto Tibaldi, Marco Vallone, Michele Goano, Francesco Bertazzi, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni -- Chip packaging: encapsulation of nitride LEDs / Xiaobing Luo, Run Hu -- White LEDs for lighting applications / Richard Kotschenreuther -- Ultraviolet LEDs / Hideki Hirayama -- Infrared emitters using III-nitride semiconductors / Akil Ajay, Yulia Kotsar, Eva Monroy -- LEDs for liquid crystal display (LCD) backlighting / Chi-Feng Chen -- LEDs and automotive lighting applications / John D. Bullough -- LEDs for large displays / Linas Svilainis -- LEDs for projectors / Linas Svilainis. |
| 摘要、提要註: |
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. |